Datenblatt-Suchmaschine für elektronische Bauteile |
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BF556C Datenblatt(PDF) 8 Page - NXP Semiconductors |
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BF556C Datenblatt(HTML) 8 Page - NXP Semiconductors |
8 / 11 page 1996 Jul 29 8 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C Fig.16 Common-source input admittance; typical values. VDS = 10 V; ID = 1 mA; Tamb =25 °C. handbook, halfpage MRC142 102 10−2 10 102 103 10−1 1 10 bis gis gis, bis (mS) f (MHz) Fig.17 Common-source transfer admittance; typical values. VDS = 10 V; ID = 1 mA; Tamb =25 °C. handbook, halfpage MRC141 10 1 10−1 10 102 103 −bfs gfs gfs, −bfs (mS) f (MHz) Fig.18 Common-source reverse admittance; typical values. VDS = 10 V; ID = 1 mA; Tamb =25 °C. handbook, halfpage MRC144 −10−3 −10−2 10 102 103 −10−1 −1 −10 brs grs brs, grs (mS) f (MHz) VDS = 10 V; ID = 1 mA; Tamb =25 °C. Fig.19 Common-source output admittance; typical values. handbook, halfpage MRC143 10 1 10−1 10−2 10 102 103 bos gos bos, gos (mS) f (MHz) |
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