 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SD1481 Datenblatt(PDF) 2 Page - NEC |
|
||||||||||||||||||||||||||||||
2SD1481 Datenblatt(HTML) 2 Page - NEC |
|
|
2 / 4 page  Data Sheet D16189EJ1V0DS 2 2SD1481 ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 40 V, IE = 0 1.0 µA DC current gain hFE1 VCE = 2.0 V, IC = 1.0 A* 2,000 20,000 DC current gain hFE2 VCE = 2.0 V, IC = 3.0 A* 500 Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 1.0 mA* 1.5 V Base saturation voltage VBE(sat) IC = 1.0 A, IB = 1.0 mA* 2.0 V Turn-on time ton 0.5 µs Storage time tstg 2.0 µs Fall time tf IC = 1.0 A, IB1 = −IB2 = 10 mA RL = 50 Ω, VCC ≅ 50 V Refer to the test circuit. 1.0 µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 4,000 to 10,000 8,000 to 20,000 TYPICAL CHARACTERISTICS (Ta = 25 °°°°C) Case Temperature Tc ( °C) Case Temperature TC ( °C) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Notes 1. Tc = 25 °C 2. 3. With infinite heatsink CASE |
Ähnliche Teilenummer - 2SD1481 |
|
Ähnliche Beschreibung - 2SD1481 |
|
|
|
Link URL |
| Privatsphäre und Datenschutz |
| ALLDATASHEETDE.COM |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
