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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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STD36NH02L Datenblatt(PDF) 4 Page - STMicroelectronics |
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STD36NH02L Datenblatt(HTML) 4 Page - STMicroelectronics |
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4 / 13 page  Electrical characteristics STD36NH02L 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 24 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 20V, VDS = 20V @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA 11.8 2.5 V RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 15A VGS= 5V, ID= 15A 0.011 0.013 0.0145 0.026 Ω Ω Table 4. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =10V, ID = 15A 18 S Ciss Coss Crss Input capacitance Output Capacitance Reverse transfer capacitance VDS =15V, f=1 MHz, VGS=0 860 255 45 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge 0.44V < VDD < 10V, ID = 30A, VGS =10V (see Figure 14) 15.5 4.1 1.7 20 nC nC nC QOSS (2) 2. Qoss = Coss*∆ VIN, Coss = Cgd+Cds Output charge VDS=16V, VGS=0 6ns RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 3 Ω |
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Ähnliche Beschreibung - STD36NH02L |
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