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BFX85 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BFX85 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 Apr 22 4 Philips Semiconductors Product specification NPN switching transistor BFX85 CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =80V − 250 nA IE = 0; VCB =80V; Tj = 100 °C − 0.1 2.5 µA IE = 0; VCB = 100 V − 10 500 nA IE = 0; VCB = 100 V; Tj = 100 °C − 0.5 30 µA IEBO emitter cut-off current IC = 0; VEB =5V − 250 nA IC = 0; VEB =5V; Tj = 100 °C − 0.1 2.5 µA IC = 0; VEB =6V − 10 500 nA hFE DC current gain IC = 10 mA; VCE =10V 50 90 − IC = 150 mA; VCE = 10 V 70 142 − IC = 500 mA; VCE = 10 V 30 90 − IC = 1 A; VCE = 10 V 15 50 − VCEsat collector-emitter saturation voltage IC = 10 mA; IB =1mA − 150 200 mV IC = 150 mA; IB =15mA − 150 350 mV IC = 500 mA; IB =50mA − 0.35 1 V IC = 1 A; IB = 100 mA − 0.66 1.6 V VBEsat base-emitter saturation voltage IC = 10 mA; IB =1mA − 0.69 1.2 V IC = 150 mA; IB =15mA − 0.92 1.3 V IC = 500 mA; IB =50mA − 1.15 1.5 V IC = 1 A; IB = 100 mA − 1.4 2 V Cc collector capacitance IE =ie = 0; VCB =10V; f=1MHz − 712 pF fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 50 185 − MHz Switching Times (between 10% and 90% levels) see Fig.2 ton turn-on time ICon = 150 mA; IBon =15mA; IBoff = −15 mA − 55 − ns td delay time − 15 − ns tr rise time − 40 − ns toff turn-off time − 360 − ns ts storage time − 300 − ns tf fall time − 60 − ns |
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Ähnliche Beschreibung - BFX85 |
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