1997 Apr 22

2

Philips Semiconductors

Product specification

NPN medium power transistors

BFY50; BFY51; BFY52

FEATURES

• High current (max. 1 A)

• Low voltage (max. 35 V).

APPLICATIONS

• General purpose industrial applications.

DESCRIPTION

NPN medium power transistor in a TO-39 metal package.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

Fig.1 Simplified outline (TO-39) and symbol.

handbook, halfpage

3

1

2

MAM317

1

2

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-base voltage

open emitter

BFY50

−−

80

V

BFY51

−−

60

V

BFY52

−−

40

V

collector-emitter voltage

open base

BFY50

−−

35

V

BFY51

−−

30

V

BFY52

−−

20

V

peak collector current

−−

1A

total power dissipation

−−

800

mW

−−

2.86

W

DC current gain

BFY50

30

112

−

BFY51

40

123

−

BFY52

60

142

−

transition frequency

BFY50

60

−−

MHz

BFY51; BFY52

50

−−

MHz