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BAP70AM Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BAP70AM Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page BAP70AM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 7 September 2010 3 of 8 NXP Semiconductors BAP70AM Silicon PIN diode array 7. Characteristics Table 6. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF =50mA - 0.9 1.1 V IR reverse current VR = 50 V - - < 100 nA Cd diode capacitance see Figure 1; f = 1 MHz; VR =0V - 570 - fF VR =1V - 400 - fF VR =5V - 270 - fF VR = 20 V - 200 250 fF rD diode forward resistance see Figure 2; f = 100 MHz; IF = 0.5 mA - 77 100 Ω IF =1mA - 40 50 Ω IF =10mA - 5.4 7 Ω IF =100 mA - 1.4 1.9 Ω τ L charge carrier life time when switched from IF =10 mA to IR =6mA; RL = 100 Ω; measured at IR =3mA -1.25 - μs LS series inductance IF = 100 mA; f = 100 MHz - 0.6 - nH f=1MHz; Tj =25 °C. f = 100 MHz; Tj =25 °C. Fig 1. Diode capacitance as a function of reverse voltage; typical values Fig 2. Diode forward resistance as a function of forward current; typical values VR (V) 020 15 510 001aaa461 400 300 500 600 Cd (fF) 200 103 102 10 1 mce007 10−1 110 rD ( Ω) IF (mA) 102 |
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