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AD8000YRDZ Datenblatt(PDF) 5 Page - Analog Devices |
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AD8000YRDZ Datenblatt(HTML) 5 Page - Analog Devices |
5 / 20 page AD8000 Rev. 0 | Page 5 of 20 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage 12.6 V Power Dissipation See Figure 4 Common-Mode Input Voltage −VS − 0.7 V to +VS + 0.7 V Differential Input Voltage ±V S Exposed Paddle Voltage −VS Storage Temperature −65°C to +125°C Operating Temperature Range −40°C to +125°C Lead Temperature Range (Soldering, 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, θJA is speci- fied for device soldered in the circuit board for surface-mount packages. Table 4. Thermal Resistance Package Type θJA θJC Unit SOIC-8 80 30 °C/W 3 mm × 3 mm LFCSP 93 35 °C/W Maximum Power Dissipation The maximum safe power dissipation for the AD8000 is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the properties of the plastic change. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric perform- ance of the AD8000. Exceeding a junction temperature of 175°C for an extended period of time can result in changes in silicon devices, potentially causing degradation or loss of functionality. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the die due to the AD8000 drive at the output. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). PD = Quiescent Power + (Total Drive Power – Load Power) () L 2 OUT L OUT S S S D R V – R V 2 V I V P ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ × + × = RMS output voltages should be considered. If RL is referenced to −VS, as in single-supply operation, the total drive power is VS × IOUT. If the rms signal levels are indeterminate, consider the worst case, when VOUT = VS/4 for RL to midsupply. () ( ) L S S S D R / V I V P 2 4 + × = In single-supply operation with RL referenced to −VS, worst case is VOUT = VS/2. Airflow increases heat dissipation, effectively reducing θJA. Also, more metal directly in contact with the package leads and exposed paddle from metal traces, through holes, ground, and power planes reduces θJA. Figure 4 shows the maximum safe power dissipation in the package vs. the ambient temperature for the exposed paddle SOIC (80°C/W) and the LFCSP (93°C/W) package on a JEDEC standard 4-layer board. θJA values are approximations. 0 0.5 1.0 1.5 2.0 2.5 3.0 –30 –20 –10 0 10 20 40 80 30 50 60 70 100 90 120 110 AMBIENT TEMPERATURE ( °C) SOIC LFCSP –40 Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec- trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation and loss of functionality. |
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