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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFB4228PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRFB4228PBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFB4228PbF 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 150 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12 15 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 1.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 170 ––– ––– S Qg Total Gate Charge ––– 72 110 nC Qgd Gate-to-Drain Charge ––– 26 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 4530 ––– Coss Output Capacitance ––– 550 ––– pF Crss Reverse Transfer Capacitance ––– 100 ––– Coss eff. Effective Output Capacitance ––– 480 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ EAR Repetitive Avalanche Energy c mJ VDS(Avalanche) Repetitive Avalanche Voltage c V IAS Avalanche Current d A Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– 83 (Body Diode) A ISM Pulsed Source Current ––– ––– 330 (Body Diode) c VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 76 110 ns Qrr Reverse Recovery Charge ––– 230 350 nC ––– 58 ––– ––– 110 ––– 33 50 ––– ––– 180 ––– Typ. Max. ƒ = 1.0MHz ––– 120 TJ = 25°C, IF = 50A, VDD = 50V di/dt = 100A/µs e TJ = 25°C, IS = 50A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 33A e VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VGS = 0V, VDS = 0V to 120V VDS = 150V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 0V L = 220nH, C= 0.3µF, VGS = 15V MOSFET symbol VDS = 25V, ID = 50A VDD = 120V, ID = 50A, VGS = 10V e Conditions and center of die contact VDD = 120V, VGS = 15V, RG= 5.1Ω VDS = 120V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.3µF, VGS = 15V VDS = 120V, RG= 5.1Ω, TJ = 100°C VDS = 25V |
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