Datenblatt-Suchmaschine für elektronische Bauteile |
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BTA140-800 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BTA140-800 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Triacs BTA140 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 1.0 K/W junction to mounting base half cycle - - 1.4 K/W R th j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 6 35 mA T2+ G- - 10 35 mA T2- G- - 11 35 mA T2- G+ - 23 70 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 8 40 mA T2+ G- - 30 60 mA T2- G- - 18 40 mA T2- G+ - 15 60 mA I H Holding current V D = 12 V; IGT = 0.1 A T2+ - 7 30 mA T2- - 12 30 mA V T On-state voltage I T = 30 A - 1.3 1.55 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V I D Off-state leakage current V D = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; 100 300 - V/ µs off-state voltage exponential waveform; gate open circuit dV com/dt Critical rate of change of V DM = 400 V; Tj = 95 ˚C; IT(RMS) = 25 A; - 10 - V/ µs commutating voltage dI com/dt = 9 A/ms; gate open circuit t gt Gate controlled turn-on I TM = 30 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dI G/dt = 5 A/µs September 1997 2 Rev 1.200 |
Ähnliche Teilenummer - BTA140-800 |
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Ähnliche Beschreibung - BTA140-800 |
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