Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC5787 Datenblatt(PDF) 1 Page - NEC |
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2SC5787 Datenblatt(HTML) 1 Page - NEC |
1 / 22 page DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD © © © © NEC Corporation 2001 © © © © NEC Compound Semiconductor Devices 2002 Document No. PU10070EJ01V0DS (1st edition) (Previous No. P15786EJ1V0DS00) Date Published January 2002 CP(K) Printed in Japan The mark • • • • shows major revised points. FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt • UHS0 technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • 3-pin lead-less minimold package (1005 PKG) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5787 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5787-T3 10 kpcs/reel • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 3.0 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation Ptot Note 105 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc. |
Ähnliche Teilenummer - 2SC5787 |
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Ähnliche Beschreibung - 2SC5787 |
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