Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2520DX Datenblatt(PDF) 5 Page - NXP Semiconductors |
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BU2520DX Datenblatt(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX Fig.13. Forward bias safe operating area. T hs = 25 ˚C I CDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound. BU2520AF IC / A 100 10 1 0.1 0.01 1 10 100 1000 VCE / V 100 us 1 ms 10 ms DC 30 us tp = Ptot ICM ICDC = 0.01 September 1997 5 Rev 2.300 |
Ähnliche Teilenummer - BU2520DX |
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Ähnliche Beschreibung - BU2520DX |
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