Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2522AW Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BU2522AW Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW Fig.3. Switching times waveforms (64 kHz). Fig.4. Switching times definitions. Fig.5. Switching times test circuit. Fig.6. Test Circuit RBSOA. V CC = 140 V; -VBB = 4 V; L C = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH; C FB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A Fig.7. Typical DC current gain. h FE = f (IC) V CE = 5 V Fig.8. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB V ICsat I end 16 us 6.5 us 5 us t t t TRANSISTOR DIODE B I C I B CE LB IBend -VBB LC T.U.T. VCC VCL CFB ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.01 0.1 1 10 100 IC / A BU2522A 100 10 1 h FE Tj = 25 C Tj = -40 C Tj = 85 C + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 0.1 1 10 IC / A 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 VBESAT / V BU2522A Tj = 25 C Tj = 85 C IC/IB = 3 5 September 1997 3 Rev 1.100 |
Ähnliche Teilenummer - BU2522AW |
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Ähnliche Beschreibung - BU2522AW |
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