Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC6040 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SC6040 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC6040 2004-12-01 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCES 800 V Collector-emitter voltage VCEO 410 V Emitter-base voltage VEBO 8 V DC IC 1.0 Collector current Pulse ICP 2.0 A Base current IB 0.5 A Collector power dissipation Ta = 25°C PC 1.0 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Base Collector Emitter 1. 2. 3. |
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