 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SC6040 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
|
||||||||||||||||||||||||||||||
2SC6040 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
|
|
1 / 5 page  2SC6040 2004-12-01 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCES 800 V Collector-emitter voltage VCEO 410 V Emitter-base voltage VEBO 8 V DC IC 1.0 Collector current Pulse ICP 2.0 A Base current IB 0.5 A Collector power dissipation Ta = 25°C PC 1.0 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Base Collector Emitter 1. 2. 3. |
Ähnliche Teilenummer - 2SC6040 |
|
Ähnliche Beschreibung - 2SC6040 |
|
|
|
Link URL |
| Privatsphäre und Datenschutz |
| ALLDATASHEETDE.COM |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
