Datenblatt-Suchmaschine für elektronische Bauteile |
|
FDS8962C Datenblatt(PDF) 6 Page - Fairchild Semiconductor |
|
FDS8962C Datenblatt(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page 6 www.fairchildsemi.com FDS8962C Rev. A 1 Typical Characteristics: Q2 (P-Channel) 0 10 20 30 0123 456 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V -3.0V -3.5V -4.0V -4.5V -5.0V -6.0V Figure 11. On-Region Characteristics. 0.8 1 1.2 1.4 1.6 1.8 2 06 12 18 24 30 -ID, DRAIN CURRENT (A) VGS=-4.0V -4.5V -6.0V -7.0V -8.0V -10V -5.0V Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) ID = -5A VGS = -10V Figure 13. On-Resistance Variation with Temperature. 0 0.05 0.1 0.15 0.2 0.25 24 68 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -2.5A TA = 125 °C TA = 25 °C Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 0 3 6 9 12 15 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25oC 125oC VDS = -5V Figure 15. Transfer Characteristics. 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS =0V TA = 125 o C 25 o C -55 o C Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Ähnliche Teilenummer - FDS8962C |
|
Ähnliche Beschreibung - FDS8962C |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |