3

°C, unless specified otherwise)

Notes:

1. Statistics distribution determined from a sample size of 500 parts taken from 3 different wafers.

2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.

GAIN (dB)

15

18

16

15.5

17

16.5

17.5

300

250

200

150

100

50

0

Figure 1. Gain distribution @ 60 mA.

LSL = 15, Nominal = 16.5, USL = 18

3.3

4.3

3.5

3.7

3.9

4.1

240

200

160

120

80

40

0

LSL = 3.3, Nominal = 3.8, USL = 4.3

FREQUENCY (GHz)

Figure 3. Gain vs. Frequency at Id = 60 mA.

FREQUENCY (GHz)

Figure 4. P1dB vs. Frequency at Id=60 mA.

FREQUENCY (GHz)

Figure 5. OIP3 vs. Frequency at Id=60 mA.

FREQUENCY (GHz)

Figure 6. NF vs. Frequency at Id=60 mA.

Vd (V)

Figure 7. Id vs. Vd and Temperature.

Id (mA)

Figure 8. Gain vs. Id and Temperature at 900 MHz.

06

2

1

3

5

4

20

15

10

5

0

06

2

1

3

5

4

20

15

10

5

0

06

2

1

3

5

4

35

30

25

20

15

10

06

2

1

3

5

4

6

5

4

3

2

05

2

1

3

4

90

80

70

60

50

40

30

20

10

0

-40

°C

25

°C

85

°C

0

100

20

40

80

60

17

16.5

16

15.5

15

14.5

14

-40

°C

25

°C

85

°C