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2N2904 Datenblatt(PDF) 1 Page - Semicoa Semiconductor

Teilenummer 2N2904
Bauteilbeschribung  Silicon PNP Transistor
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Hersteller  SEMICOA [Semicoa Semiconductor]
Direct Link  http://www.semicoa.com/
Logo SEMICOA - Semicoa Semiconductor

2N2904 Datenblatt(HTML) 1 Page - Semicoa Semiconductor

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Copyright
 2002
Semicoa Semiconductors, Inc.
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2904
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2904J)
• JANTX level (2N2904JX)
• JANTXV level (2N2904JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• PNP silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 0600
• Reference document:
MIL-PRF-19500/290
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
600
mA
Power Dissipation, TA = 25 °C
Derate above 60
°C
PT
0.8
5.7
W
mW/
°C
Power Dissipation, TC = 25 °C
Derate above 25
°C
PT
3.0
17.2
W
mW/
°C
Thermal Resistance
RθJA
175
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C


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