Datenblatt-Suchmaschine für elektronische Bauteile |
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BU4523AW Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BU4523AW Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AW Fig.9. Typical collector-emitter saturation voltage. Fig.10. Typical base-emitter saturation voltage. Fig.11. Typical collector storage and fall time. I C =8 A; Tj = 85˚C; f = 16kHz Fig.12. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C Fig.13. Transient thermal impedance. Fig.14. Test Circuit RBSOA. 0.1 1 10 100 0.01 0.1 1 10 IC / A VCEsat / V Ths = 25 C Ths = 85 C IC/IB = 5 BU4523AF/X 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 01 234 0.6 0.7 0.8 0.9 1 1.1 1.2 IB / A VBEsat / V IC = 6.5 A IC = 8 A Ths = 25 C Ths = 85 C BU4523AF/X 1E-07 1E-05 1E-03 1E-01 1E+01 0.001 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 BU4523AW t / s Zth K/W D = tp tp T T P t D 012 34 0 2 4 6 8 10 IB / A ts/tf / us BU4523AF/X 16kHz ICsat = 8 A Ths = 85 C Freq = 16 kHz ts tf LB IBend -VBB LC T.U.T. VCC VCL CFB May 1998 4 Rev 1.000 |
Ähnliche Teilenummer - BU4523AW |
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Ähnliche Beschreibung - BU4523AW |
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