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BU4530AX Datenblatt(PDF) 1 Page - NXP Semiconductors |
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1 / 4 page Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4530AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 16 A I CM Collector current peak value - 40 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W V CEsat Collector-emitter saturation voltage I C = 10 A; IB = 2.5 A - 3.0 V I Csat Collector saturation current f = 32kHz 10 - A f = 90kHz 8.0 - A t f Fall time I Csat = 10.0 A; f = 32kHz t.b.f t.b.f µs I Csat = 8.0 A; f = 90kHz t.b.f t.b.f µs PINNING - SOT399 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 16 A I CM Collector current peak value - 40 A I B Base current (DC) - 10 A I BM Base current peak value - 15 A -I BM Reverse base current peak value 1 -10 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W T stg Storage temperature -55 150 ˚C T j Junction temperature - 150 ˚C case 12 3 b c e 1 Turn-off current. January 1998 1 Rev 1.000 |
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