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74AUP1G885 Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer 74AUP1G885
Bauteilbeschribung  Low-power dual function gate
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AUP1G885 Datenblatt(HTML) 5 Page - NXP Semiconductors

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74AUP1G885_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01.00 — 26 January 2006
5 of 19
Philips Semiconductors
74AUP1G885
Low-power dual function gate
8.
Functional description
8.1 Function table
[1]
H = HIGH voltage level;
L = LOW voltage level.
9.
Limiting values
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are
observed.
[2]
For VSSOP8 packages: above 110
°C the value of Ptot derates linearly with 8.0 mW/K.
For XSON8 packages: above 45
°C the value of Ptot derates linearly with 2.4 mW/K.
Table 5:
Function table [1]
Input
Output
A
B
C
1Y
2Y
LLLLL
H
LLLH
LH
LLH
H
H
LLH
LLH
LL
HL
HHL
L
HHL
H
HHHHL
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+4.6
V
IIK
input clamping
current
VI <0V
-
−50
mA
VI
input voltage
[1]
−0.5
+4.6
V
IOK
output clamping
current
VO <0V
-
−50
mA
VO
output voltage
active mode
[1]
−0.5
VCC + 0.5 V
Power-down mode
[1]
−0.5
+4.6
V
IO
output current
VO =0 VtoVCC
-
±20
mA
ICC
quiescent supply
current
-
+50
mA
IGND
ground current
-
−50
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power
dissipation
Tamb = −40 °C to +125 °C
[2] -
300
mW


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