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SI5486DUV Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI5486DUV Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si5486DU SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.50 V On-State Drain Current a ID(on) VDS ≤ 5 V, VGS = 4.5 V 305 A VGS = 4.5 V, ID = 7.7 A 0.012 0.012 Drain-Source On-State Resistance a RDS(on) VGS = 2.5 V, ID = 7.3 A 0.014 0.014 Ω VGS = 1.8 V, ID = 4.8 A 0.017 0.017 Forward Transconductance a gfs VDS = 10 V, ID = 7.7 A 30 46 S Diode Forward Voltage a VSD IS = 9.1 A 0.72 0.85 V Dynamic b Input Capacitance Ciss 2320 2100 Output Capacitance Coss 311 310 Reverse Transfer Capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz 139 180 pF VDS = 10 V, VGS = 8 V, ID = 9.3 A 33 36 Total Gate Charge Qg 19 21 Gate-Source Charge Qgs 3.3 3.3 Gate-Drain Charge Qgd VDS = 10 V, VGS = 4.5 V, ID = 9.3 A 3.1 3.1 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74181 S-60546 Rev. A, 10-Apr-06 |
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