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IRGP4068DPBF Datenblatt(PDF) 5 Page - International Rectifier

Teilenummer IRGP4068DPBF
Bauteilbeschribung  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRGP4068DPBF Datenblatt(HTML) 5 Page - International Rectifier

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IRGP4068DPbF/IRGP4068D-EPbF
www.irf.com
5
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0
20
40
60
80
100
VCE (V)
10
100
1000
10000
Cies
Coes
Cres
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE= 400V, RG = 10Ω; VGE = 15V
0
20
40
60
80
100
IC (A)
10
100
1000
tdOFF
tF
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
0
25
50
75
100
125
Rg (
Ω)
1000
1500
2000
2500
3000
3500
4000
4500
5000
EOFF
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
0
25
50
75
100
125
RG (Ω)
10
100
1000
tdOFF
tF
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600µH
0
255075
100
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES= 300V
VCES= 400V
8
1012141618
VGE (V)
4
6
8
10
12
14
16
18
50
100
150
200
250
300
350
400
Isc
Tsc
Fig. 16 - VGE vs. Short Circuit
VCC = 400V; TC = 25°C


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