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SI5941DU Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI5941DU Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 3 page 2 Vishay Siliconix SPICE Device Model Si5941DU www.vishay.com Document Number: 74132 S-52019 ⎯Rev. A, 03-Oct-05 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250μA 0.80 V On-State Drain Current a ID(on) VDS ≤ −5V, VGS = −4.5V 54 A VGS = −4.5V, ID = −3.6 A 0.058 0.055 VGS = −2.5V, ID = −2.9 Α 0.083 0.086 Drain-Source On-State Resistance a rDS(on) VGS = −1.8V, ID = −0.66 Α 0.114 0.125 Ω Forward Transconductance a gfs VDS = −4V, ID = −3.6 A 9 8 S Diode Forward Voltage a VSD IS = −1A, VGS = 0 V −0.80 −0.80 V Dynamic b Input Capacitance Ciss 589 700 Output Capacitance Coss 103 325 Reverse Transfer Capacitance Crss VDS = −4 V, VGS = 0 V, f = 1 MHz 57 220 pF VDS = −4 V, VGS = −8 V, ID = −5 A 9.5 11 Total Gate Charge Qg 5.7 6.5 Gate-Source Charge Qgs 1.3 1.3 Gate-Drain Charge Qgd VDS = −4 V, VGS = −4.5 V, ID = −5 A 1.5 1.5 nC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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