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2SJ658 Datenblatt(Datasheet) 1 Page - Sanyo Semicon Device

Teile-Nr. 2SJ658
Beschreibung  High-Speed Switching Applications
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Hersteller  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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2SJ658
No.7552-1/4
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
--2
A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
--8
A
Allowable Power Dissipation
PD
0.7
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--20V, VGS=0
--10
µA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7552
2SJ658
Package Dimensions
unit : mm
2178
[2SJ658]
P-Channel Silicon MOSFET
High-Speed Switching Applications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Source
2 : Drain
3 : Gate
SANYO : NP
5.0
4.0
0.5
0.45
0.45
4.0
0.44
1.3
1.3
12
3
31504 TS IM TA-100561




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