Datenblatt-Suchmaschine für elektronische Bauteile |
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STP62NS04Z Datenblatt(PDF) 5 Page - STMicroelectronics |
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STP62NS04Z Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 12 page STP62NS04Z Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 62 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 248 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 62A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C Figure 15 on page 8 45 65 2.9 ns µC A |
Ähnliche Teilenummer - STP62NS04Z_06 |
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Ähnliche Beschreibung - STP62NS04Z_06 |
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