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SI4955DY-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI4955DY-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 72241 S-61006-Rev. C, 12-Jun-06 Vishay Siliconix Si4955DY CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted Source-Drain Diode Forward Voltage Threshold Voltage VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 30 10 1 TJ = 25 °C TJ - Temperature (°C) - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VGS - Gate-to-Source Voltage (V) 0.00 0.04 0.08 0.12 0.16 0.20 0 2468 10 ID = 5 A ID = 2 A 0 20 30 10 15 Time (sec) 25 1 100 600 10 10- 1 10- 2 10- 3 5 Safe Operating Area VDS - Drain-to-Source Voltage (V) 10 0.01 0.1 1 10 100 1 100 dc 0.1 P(t) = 10 P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 TA = 25 °C Single Pulse IDM Limited ID(on) Limited rDS(on) Limited BVDSS Limited |
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