Datenblatt-Suchmaschine für elektronische Bauteile |
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BD241A Datenblatt(PDF) 2 Page - STMicroelectronics |
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BD241A Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.13 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = rated VCEO 0.2 mA ICEO Collector Cut-off Current (IB = 0) for BD241A/BD242A VCE = 30 V for BD241B/BD242B VCE = 60 V for BD241C/BD242C VCE = 60 V 0.3 0.3 0.3 mA mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = 30 mA for BD241A/BD242A for BD241B/BD242B for BD241C/BD242C 60 80 100 V V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 3 A IB = 0.6 A 1.2 V VBE ∗ Base-Emitter Voltage IC = 3 A VCE = 4 V 1.8 V hFE ∗ DC Current Gain IC = 1 A VCE = 4 V IC = 3 A VCE = 4 V 25 10 hfe Small Signal Current Gain IC = 0.5 A VCE = 10 V f = 1MHz IC = 0.5 A VCE = 10 V f = 1KHz 3 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP types voltage and current values are negative. For the characteristics curves see TIP31/TIP32 series. BD241A/B/C/BD242A/B/C 2/4 |
Ähnliche Teilenummer - BD241A |
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Ähnliche Beschreibung - BD241A |
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