Datenblatt-Suchmaschine für elektronische Bauteile |
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STB70NFS03L Datenblatt(PDF) 5 Page - STMicroelectronics |
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STB70NFS03L Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 13 page STB70NFS03L Electrical characteristics 5/13 Table 7. Switching times Symbol Parameter Test Conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 15V, ID = 35A, RG = 4.7Ω, VGS = 5V (see Figure 10) 22 165 ns ns td(off) tf Turn-off delay time Fall time VDD = 15V, ID = 35A, RG = 4.7Ω, VGS = 5V (see Figure 10) 21 25 ns ns Table 8. Source drain diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 70 280 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 70A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 70A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see Figure 15) 42 52 2.5 ns nC A |
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