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STP100NF04 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP100NF04
Bauteilbeschribung  N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STB100NF04 - STP100NF04
Electrical ratings
3/17
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS=0)
40
V
VGS
Gate-source Voltage
±20
V
ID
(1)
1.
Current limited by package
Drain-current (continuous) at Tc=25°C
120
A
ID
(1)
Drain-current (continuous) at Tc=100°C
120
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain-current (pulsed)
480
A
PTOT
Total dissipation at Tc=25°C
300
W
Derating factor
2
W/°C
dv/dt(3)
3.
ISD ≤120A, di/dt ≤300A/µs, VDD < V(BR)DSS. Tj < Tjmax
Peak Diode Recovery voltage slope
6
V/ns
EAS
(4)
4.
Starting Tj=25°C, ID=60A, VDD=30V
Single Pulse Avalanche Energy
1.2
J
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 175
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.5
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(see Figure 13)°C/W
Rthj-amb
Thermal Resistance Junction-ambient (Free Air) Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C


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