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STD30NF03LTT4 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STD30NF03LTT4
Bauteilbeschribung  N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STD30NF03LT
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)30
V
VGS
Gate- source voltage
± 20
V
ID
(1)
1.
Current limited by package
Drain current (continuous) at TC = 25°C
30
A
ID
Drain current (continuous) at TC = 100°C
21
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
120
A
Ptot
Total dissipation at TC = 25°C
50
W
Derating Factor
0.33
W/°C
dv/dt (3)
3.
ISD ≤30A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
4
V/ns
EAS
(4)
4.
Starting Tj = 25 °C, ID = 15A VDD = 25V
Single pulse avalanche energy
450
mJ
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
3.0
°C/W
Rthj-amb
Thermal resistance junction-ambient max
100
°C/W
TJ
Maximum lead temperature for soldering purpose
275
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
40
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 15 V)
2.3
J


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