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STD100NH03L Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STD100NH03L
Bauteilbeschribung  N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD100NH03L Datenblatt(HTML) 3 Page - STMicroelectronics

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STD100NH03L
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VDGR
Drain-gate voltage (RGS = 20KΩ)30
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Value limited by wire bonding.
Drain current (continuous) at TC = 25°C
60
A
ID
(1)
Drain current (continuous) at TC=100°C
60
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
240
A
PTOT
Total dissipation at TC = 25°C
100
W
Derating factor
0.66
W/°C
EAS
(3)
3.
Starting TJ = 25
oC, I
D = 30A, VDD = 15V
Single pulse avalanche energy
700
mJ
Tstg
Storage temperature
-55 to 175
°C
TJ
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case Max
1.5
°C/W
RthJA
Thermal resistance junction-ambient Max
100
°C/W
RthJ-PCB Thermal resistance junction-PCB
Max
43
°C/W
Tl
Maximum lead temperature for soldering
purpose
275
°C


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