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STGP10NC60HD Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STGP10NC60HD
Bauteilbeschribung  N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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Electrical ratings
STGB10NC60HD - STGP10NC60HD
2/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC
(1)
1.
Calculated according to the iterative formula::
Collector current (continuous) at TC = 25°C
20
A
IC
(1)
Collector current (continuous) at TC = 100°C
10
A
ICL
(2)
2.
Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V
Collector current (pulsed)
40
A
IF
Diode RMS forward current at TC = 25°C
10
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25°C
60
W
Tstg
Storage temperature
– 55 to 150
°C
Tj
Operating junction temperature
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
2.08
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
I
C
T
C
()
T
JMAX
T
C
R
THJ
C
V
CESAT MAX
()
T
C
I
C
,
()
×
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=


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