Datenblatt-Suchmaschine für elektronische Bauteile |
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STP08IE120F4 Datenblatt(PDF) 1 Page - STMicroelectronics |
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STP08IE120F4 Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 11 page Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. November 2006 Rev 1 1/11 11 Order codes Part Number Marking Package Packing STP08IE120F4 P08IE120F4 TO220FP-4L Tube STP08IE120F4 Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω General features ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz ■ Squared RBSOA up to 1200V ■ Very low Ciss driven by RG = 47Ω ■ Very low turn-off cross over time Applications ■ Aux SMPS for three phase mains Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best perfor- mances in high frequency / high voltage applica- tions. It is designed for use in Gate Driven based topolo- gies. Internal schematic diagrams VCS(ON) IC RCS(ON) 0.8 V 8 A 0.10 W TO220FP-4L www.st.com |
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Ähnliche Beschreibung - STP08IE120F4 |
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