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STP80NS04ZB Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STP80NS04ZB
Bauteilbeschribung  N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80NS04ZB Datenblatt(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (*)
DYNAMIC
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.75
62.5
300
°C/W
°C/W
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
80
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
500
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Clamped Voltage
ID = 1 mA,
VGS = 0
-40 < TJ < 175 oC
33
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 16 V
Tc=25 oC
VDS = 16 V
TJ =150 oC
VDS = 16 V
TJ =175 oC
10
50
100
µA
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 10 V
TJ =175 oC
VGS = ± 16 V
TJ =175 oC
50
150
µA
µA
VGSS
Gate-Source
Breakdown Voltage
IGS = 100 µA
18
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 1 mA
-40 < TJ < 150 oC
1.7
3
4.2
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 40 A
VGS = 16 V
ID = 40 A
8
7.5
9
8
m
m
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS =10V
80
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (*)
Forward Transconductance
VDS>ID(on)xRDS(on)max ID=40A
30
50
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2700
1275
285
3300
1600
350
pF
pF
pF


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