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STX817A-AP Datenblatt(PDF) 4 Page - STMicroelectronics |
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STX817A-AP Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 9 page Electrical characteristics STX817A 4/9 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE =0) VCE =-80V -500 µA ICEO Collector cut-off current (IB =0) VCE =-80V -1 mA IEBO Emitter cut-off current (IC =0) VEB =-5V -100 µA VCEO(sus)(1) Collector-emitter sustaining voltage (IB =0) IC =-10mA -80 V VCE(sat) (1) Collector-emitter saturation voltage IC =-100mA IB =-10mA IC =-1A IB =-100mA -0.25 -0.5 V V VBE(sat) (1) Base-emitter saturation voltage IC =-100mA IB =-10mA IC =-1A IB =-100mA -1 -1.1 V V hFE (1) DC current gain IC =-100mA VCE =-2V IC =-500mA VCE =-2V IC =-1A VCE =- 2V 140 80 25 ft Transition frequency IC =-0.1A VCE =-10V 50 MHz Obsolete Product(s) - Obsolete Product(s) |
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