Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1020RLRA Datenblatt(PDF) 1 Page - ON Semiconductor |
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2SA1020RLRA Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 3 1 Publication Order Number: 2SA1020/D 2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCE 50 Vdc Collector −Base Voltage VCB 50 Vdc Emitter −Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25 °C PD 900 5.0 mW mW/ °C Total Power Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com Preferred devices are recommended choices for future use and best overall value. VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS COLLECTOR 2 3 BASE 1 EMITTER PNP TO−92 (TO−226) CASE 29−10 STYLE 14 3 2 1 MARKING DIAGRAM 2SA 1020 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION (Note: Microdot may be in either location) |
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