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CS8240YTQ5 Datenblatt(PDF) 4 Page - ON Semiconductor

Teilenummer CS8240YTQ5
Bauteilbeschribung  500 mA High Side (PNP) Driver with On-Chip Flyback Diode
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CS8240YTQ5 Datenblatt(HTML) 4 Page - ON Semiconductor

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CS8240
http://onsemi.com
4
Figure 6. Flyback Clamp Characteristics
Figure 7. IIN vs. VIN
01
2
3
4
5
6
(ms)
78
5
0
12
–15
910
0
Load = 80
Ω, 50 mH
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Input Voltage (V)
ON
OFF
CIRCUIT DESCRIPTION
Input Stage
The input stage is a self biased band gap based circuit with
a positive going trip point of 1.45 V (typ) and a negative
going trip point of 1.20 V (typ) (250 mV of hysteresis).
When the input voltage is below the positive trip point, the
quiescent current of the supply voltage line is less than
1.0
µA, (typ). When the input voltage exceeds the positive
trip point (1.45 V, typ), the input stage “wakes up” the rest
of the CS8240 circuitry and turns on the output stage.
Output Stage
The output stage is built around a high current PNP output
transistor. A control amplifier monitors the saturation
voltage of the output PNP and maintains a balance of low
saturation voltage and minimum base drive to the PNP for
the given output current. The base drive of the PNP is the
dominant component of the quiescent current of the CS8240
and is dependent on the level of output current.
Short circuit protection (1.1 A, typ) is also incorporated in
the output stage.
Protection Circuitry
In addition to the short circuit protection mentioned
above, the CS8240 also incorporates a thermal shutdown
circuit (165
°C, typ) and a high voltage shutdown circuit
(33 V, typ), both of which cut off the drive to the PNP output
transistor when excessive current is drawn. Inherent in the
design of the CS8240 is transient protection to +60 V and
–50 V on the supply line. The CS8240 is ESD protected in
excess of 2.0 kV (Human Body Model).


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