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CS51221ED16G Datenblatt(PDF) 5 Page - ON Semiconductor

Teilenummer CS51221ED16G
Bauteilbeschribung  Enhanced Voltage Mode PWM Controller
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CS51221ED16G Datenblatt(HTML) 5 Page - ON Semiconductor

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CS51221
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ELECTRICAL CHARACTERISTICS (−40
°C < TA < 85°C; −40°C < TJ < 125°C; 3.0 V < VC < 15 V; 4.7 V < VCC < 15 V;
RT = 12 k; CT = 390 pF; unless otherwise specified.)
Characteristic
Unit
Max
Typ
Min
Test Conditions
Gate Driver
High Saturation Voltage
VC − GATE, VC = 10 V, ISOURCE = 200 mA
1.5
2.0
V
Low Saturation Voltage
GATE − PGND, ISINK = 200 mA
1.2
1.5
V
High Voltage Clamp
11
13.5
16
V
Output Current
1.0 nF Load. Note 3
1.0
1.25
A
Output UVL Leakage
GATE = 0 V
1.0
50
mA
Rise Time
1.0 nF Load, VC = 20 V, 1.0 V < GATE < 9.0 V
60
100
ns
Fall Time
1.0 nF Load, VC = 20 V, 9.0 V < GATE < 1.0 V
25
50
ns
Max Gate Voltage During UVL/Sleep
IGATE = 500 mA
0.4
0.7
1.0
V
Feed Forward (FF)
Discharge Voltage
IFF = 2.0 mA
0.3
0.7
V
Discharge Current
FF = 1.0 V
2.0
16
30
mA
FF to GATE Delay
50
75
125
ns
Overcurrent Protection
Overcurrent Threshold
ISET = 0.5 V, Ramp ISENSE
0.475
0.5
0.525
V
ISENSE to GATE Delay
50
90
125
ns
External Voltage Monitors
Overvoltage Threshold
OV Increasing
1.9
2.0
2.1
V
Overvoltage Hysteresis Current
OV = 2.15 V
10
12.5
15
mA
Undervoltage Threshold
UV Increasing
0.95
1.0
1.05
V
Undervoltage Hysteresis
25
75
125
mV
Soft−Start (SS)
Charge Current
SS = 2.0 V
40
50
70
mA
Discharge Current
SS = 2.0 V
4.0
5.0
7.0
mA
Charge Voltage
2.8
3.0
3.4
V
Discharge Voltage
0.25
0.3
0.35
V
Soft−Start Clamp Offset
FF = 1.25 V
1.15
1.25
1.35
V
Soft−Start Fault Voltage
OV = 2.15 V or LV = 0.85 V
0.1
0.2
V
Blanking
Blanking Time
50
150
250
ns
SS Blanking Disable Threshold
VFB < 1.0
2.8
3.0
3.3
V
COMP Blanking Disable Threshold
VFB < 1.0, SS > 3.0 V
2.8
3.0
3.3
V
Thermal Shutdown
Thermal Shutdown
Note 3
125
150
180
°C
Thermal Hysteresis
Note 3
5.0
10
15
°C
3. Guaranteed by design, not 100% tested in production.


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