Datenblatt-Suchmaschine für elektronische Bauteile |
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J110RLRAG Datenblatt(PDF) 2 Page - ON Semiconductor |
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J110RLRAG Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 4 page J110 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −1.0 mAdc) V(BR)GSS −25 − Vdc Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) IGSS − − −3.0 −200 nAdc Gate−Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 mAdc) VGS(off) −0.5 −4.0 Vdc Drain Source On−Resistance (VDS v 0.1 V, VGS = 0 V) RDS(on) − 18 W Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc) IDSS 10 − mAdc DYNAMIC CHARACTERISTICS Drain−Gate and Source−Gate On−Capacitance (VDS = VGS = 0, f = 1.0 MHz) Cdg(on) + Csg(on) − 85 pF Drain−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Cdg(off) − 15 pF Source−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Csg(off) − 15 pF 1. Pulse Width = 300 ms, Duty Cycle = 3.0%. 0 −20 40 −4 VGS, GATE−SOURCE VOLTAGE (VOLTS) 0 VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 1. Common Source Input Capacitance versus Gate−Source Voltage Figure 2. Common Source Reverse Feedback Capacitance versus Gate−Source Voltage 100 0 −20 −8 20 VDS = 0 V 60 VDS = 0 V 0 100 40 −12 −12 −16 −4 −8 −16 80 80 20 60 5 V 10 V 5 V 10 V 0−8 8 −2 −1 VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS) 0 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance versus Gate−Source Cutoff Voltage Figure 4. Output Characteristic VGS(off) = −2.0 V 28 20 −3 4 12 VGS = 0 V 16 0 100 40 12 −4 −5 −6 −7 4 6 10 14 16 18 80 20 60 VGS(off): VDS = 5 V VGS(off): ID = 1.0 mA RDS(on): VDS ≤ 0.1 V RDS(on): VGS = 0 V 0 90 30 70 10 50 −0.25 V −0.5 V −0.75 V −1.25 V −1 V |
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