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KA5S0965 Datenblatt(PDF) 4 Page - Fairchild Semiconductor

Teilenummer KA5S0965
Bauteilbeschribung  Power Switch(FPS)
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KA5S0965 Datenblatt(HTML) 4 Page - Fairchild Semiconductor

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KA5S-SERIES
4
Electrical Characteristics (SFET Part)
(Ta = 25
°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
KA5S0765C
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max., Rating, VGS=0V
-
-
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125
°C
-
-
200
µA
Static Drain-Source on Resistance(1)
RDS(on)
VGS=10V, ID=4.0A
-
1.25
1.6
Forward Transconductance(1)
gfs
VDS=15V, ID=4.0A
3.0
-
-
S
Input Capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-
1600
-
pF
Output Capacitance
Coss
-
310
-
Reverse Transfer Capacitance
Crss
-
120
-
Turn on Delay Time
td(on)
VDD=0.5B VDSS, ID=7.0A
(MOSFET switching
time is essentially
independent of operating
temperature)
-25
-
nS
Rise Time
tr
-
55
-
Turn Off Delay Time
td(off)
-
80
-
Fall Time
tf
-
50
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=7.0A,
VDS=0.5B VDSS(MOSFET
switching time is essentially
independent of operating
temperature)
--
72
nC
Gate-Source Charge
Qgs
-
9.3
-
Gate-Drain (Miller) Charge
Qgd
-
29.3
-
KA5S0965
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max., Rating, VGS=0V
-
-
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125
°C
-
-
200
µA
Static Drain-Source on Resistance(1)
RDS(on)
VGS=10V, ID=4.5A
-
0.96
1.2
Forward Transconductance(1)
gfs
VDS=50V, ID=4.5A
5.0
-
-
S
Input Capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-
1750
-
pF
Output Capacitance
Coss
-
190
-
Reverse Transfer Capacitance
Crss
-
78
-
Turn on Delay Time
td(on)
VDD=0.5B VDSS, ID=9.0A
(MOSFET switching time is
essentially independent of
operating temperature)
-20
50
nS
Rise Time
tr
-
23
55
Turn Off Delay Time
td(off)
-
85
180
Fall Time
tf
-
30
70
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=9.0A,
VDS=0.5B VDSS(MOSFET
switching time is essentially
independent of operating
temperature)
-74
95
nC
Gate-Source Charge
Qgs
-
12
-
Gate-Drain (Miller) Charge
Qgd
-
35
-


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