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MCR08B Datenblatt(PDF) 5 Page - ON Semiconductor

Teilenummer MCR08B
Bauteilbeschribung  Sensitive Gate Silicon Controlled Rectifiers
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Hersteller  ONSEMI [ON Semiconductor]
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MCR08B Datenblatt(HTML) 5 Page - ON Semiconductor

  MCR08B Datasheet HTML 1Page - ON Semiconductor MCR08B Datasheet HTML 2Page - ON Semiconductor MCR08B Datasheet HTML 3Page - ON Semiconductor MCR08B Datasheet HTML 4Page - ON Semiconductor MCR08B Datasheet HTML 5Page - ON Semiconductor MCR08B Datasheet HTML 6Page - ON Semiconductor  
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MCR08B, MCR08M
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5
10000
100
10,000
10
100
1000
1.0
10000
1000
100
10
1.0
0.1
10
100
1000
10,000
100,000
CGK, GATE-CATHODE CAPACITANCE (nF)
0.1
1.0
10
100
RGK, GATE-CATHODE RESISTANCE (OHMS)
100
1.0
0.1
1000
1.0
RGK, GATE-CATHODE RESISTANCE (OHMS)
10
100
10,000
100,000
10
Figure 14. Holding Current Range versus
Gate-Cathode Resistance
Figure 15. Exponential Static dv/dt versus Junction
Temperature and Gate-Cathode Termination Resistance
RGK, GATE-CATHODE RESISTANCE (OHMS)
0.01
IGT = 48 mA
TJ = 25°C
IGT = 7 mA
50°
75°
125°
500 V
100 V
GATE-CATHODE RESISTANCE (OHMS)
100
1000
10,000
100,000
10
5000
500
50
5.0
0.5
1000
500
400 V
TJ = 110°C
50 V
50
10
5.0
10000
100
1.0
1000
500
50
10
5.0
TJ = 110°C
400 V (PEAK)
RGK = 10 k
RGK = 100
RGK = 1.0 k
10000
100
1.0
1000
500
50
10
5.0
IGT = 5 mA
IGT = 70 mA
IGT = 35 mA
IGT = 15 mA
110°
TJ = 25°
Vpk = 400 V
200 V
300 V
Figure 16. Exponential Static dv/dt versus Peak
Voltage and Gate-Cathode Termination Resistance
Figure 17. Exponential Static dv/dt versus
Gate-Cathode Capacitance and Resistance
Figure 18. Exponential Static dv/dt versus
Gate-Cathode Termination Resistance and
Product Trigger Current Sensitivity


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