Datenblatt-Suchmaschine für elektronische Bauteile |
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MCR08BT1 Datenblatt(PDF) 1 Page - ON Semiconductor |
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MCR08BT1 Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 5 1 Publication Order Number: MCR08BT1/D MCR08B, MCR08M Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features • Sensitive Gate Trigger Current • Blocking Voltage to 600 V • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, RGK = 1000 W TJ = 25 to 110°C) MCR08BT1 MCR08MT1 VDRM, VRRM 200 600 V On-State Current RMS (All Conduction Angles; TC = 80°C) IT(RMS) 0.8 A Peak Non-repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 8.0 A Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s Forward Peak Gate Power (TC = 80°C, t = 1.0 ms) PGM 0.1 W Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.01 W Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on Anode Tab Adjacent to Epoxy RqJT 25 °C/W Maximum Device Temperature for Solder- ing Purposes (for 10 Seconds Maximum) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS Preferred devices are recommended choices for future use and best overall value. Device Package Shipping† ORDERING INFORMATION MCR08BT1 SOT−223 1000/Tape &Reel MCR08MT1 SOT−223 1000/Tape & Reel K G A SOT−223 CASE 318E STYLE 10 1 PIN ASSIGNMENT 1 2 3 Anode Gate Cathode 4 Anode http://onsemi.com MCR08MT1G SOT−223 (Pb−Free) 1000/Tape & Reel MCR08BT1G SOT−223 (Pb−Free) 1000/Tape &Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 AYW CR08x G G CR08x = Device Code x = B or M A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM |
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