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MCR08BT1 Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer MCR08BT1
Bauteilbeschribung  Sensitive Gate Silicon Controlled Rectifiers
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
1
Publication Order Number:
MCR08BT1/D
MCR08B, MCR08M
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.
Features
Sensitive Gate Trigger Current
Blocking Voltage to 600 V
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, RGK = 1000 W
TJ = 25 to 110°C)
MCR08BT1
MCR08MT1
VDRM,
VRRM
200
600
V
On-State Current RMS
(All Conduction Angles; TC = 80°C)
IT(RMS)
0.8
A
Peak Non-repetitive Surge Current
(1/2 Cycle Sine Wave, 60 Hz, TC = 25°C)
ITSM
8.0
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.4
A2s
Forward Peak Gate Power
(TC = 80°C, t = 1.0 ms)
PGM
0.1
W
Average Gate Power
(TC = 80°C, t = 8.3 ms)
PG(AV)
0.01
W
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, Junction−to−Ambient
PCB Mounted per Figure 1
RqJA
156
°C/W
Thermal Resistance, Junction−to−Tab
Measured on Anode Tab Adjacent to Epoxy
RqJT
25
°C/W
Maximum Device Temperature for Solder-
ing Purposes (for 10 Seconds Maximum)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
SCRs
0.8 AMPERES RMS
200 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MCR08BT1
SOT−223
1000/Tape &Reel
MCR08MT1
SOT−223
1000/Tape & Reel
K
G
A
SOT−223
CASE 318E
STYLE 10
1
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
http://onsemi.com
MCR08MT1G
SOT−223
(Pb−Free)
1000/Tape & Reel
MCR08BT1G
SOT−223
(Pb−Free)
1000/Tape &Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
AYW
CR08x
G
G
CR08x = Device Code
x = B or M
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM


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