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MCR08BT1 Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer MCR08BT1
Bauteilbeschribung  Sensitive Gate Silicon Controlled Rectifiers
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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MCR08BT1 Datenblatt(HTML) 3 Page - ON Semiconductor

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MCR08B, MCR08M
http://onsemi.com
3
PAD AREA = 4.0 cm2, 50
OR 60 Hz HALFWAVE
2.0
0
4.0
6.0
8.0
10
TYPICAL
MAXIMUM
4
1 23
MINIMUM
FOOTPRINT = 0.076 cm2
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
PCB WITH TAB AREA
AS SHOWN
L
L
180°
110
85
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.5
0.4
0.3
0.2
0.1
0
50 OR 60 Hz HALFWAVE
110
100
90
80
60
50
70
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
110
100
90
80
60
50
40
30
20
70
Figure 2. On-State Characteristics
Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature
Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
FOIL AREA (cm2)
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
10
1.0
0.1
0.01
4.0
1.0
110
0.5
0.3
0.2
0.1
0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
0
100
90
80
60
50
40
30
20
0.4
70
dc
Figure 7. Current Derating
Reference: Anode Tab
180°
α = 30°
60°
90°
60°
120°
60°
dc
180°
120°
1.0 cm2 FOIL, 50 OR
60 Hz HALFWAVE
dc
2.0
3.0
TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C
160
140
120
100
60
40
80
120°
90°
60°
90°
1.0
3.0
5.0
7.0
9.0
150
130
110
90
70
50
30
α
α = CONDUCTION
ANGLE
50 OR 60 Hz HALFWAVE
α
α = CONDUCTION
ANGLE
90°
α = 30°
α
α = CONDUCTION
ANGLE
180°
120°
α
α = CONDUCTION
ANGLE
α = 30°
dc
α = 30°


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