MJ15012G datasheet(2/4 Pages) ONSEMI

Teilenummer	MJ15012G

Bauteilbeschribung	Complementary Silicon Power Transistors

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Hersteller	ONSEMI [ON Semiconductor]

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MJ15011 (NPN), MJ15012 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(IC = 100 mA)

V(BR)CEO

250

−

Vdc

Collector Cutoff Current

(VCE = 200 Vdc)

ICEO

−

1

mAdc

Collector Cutoff Current

(VCE = 250 Vdc, VBE(off) = 15 Vdc)

ICEX

−

100

μAdc

Emitter Cutoff Current

(VBE = 5 Vdc)

IEBO

−

10

μAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 2 Adc, VCE = 2 Vdc)

(IC = 4 Adc, VCE = 2 Vdc)

hFE

20

15

120

−

Collector−Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.2 Adc)

(IC = 4 Adc, IB = 0.4 Adc)

VCE(sat)

−

0.6

1.0

Vdc

Base−Emitter On Voltage

(IC = 4 Adc, VCE = 2 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, f = 1 MHz)

Cob

−

750

pF

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 0.5 s)

(VCE = 100 Vdc, t = 0.5 s)

IS/b

5

1.4

−

Adc

2. Pulse Test: Pulse Width = 300

μs, Duty Cycle v 2%.

5

Figure 1. DC Current Gain

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

20

30

300

10

2

15

100

150

50

70

1

0.5

0.1

0.2

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

dc

200

12

5

10

0.1

0.2

0.5

Figure 2. Active Region Safe Operating Area

IC, COLLECTOR CURRENT

VCE = 2 Vdc

50

100

20

10

5

2

200

MJ15011

MJ15012

Ähnliche Beschreibung - MJ15012G

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