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MJE5742G Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer MJE5742G
Bauteilbeschribung  NPN Silicon Power Darlington Transistors 8 AMPERES 300??00 VOLTS 80 WATTS
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5742G Datenblatt(HTML) 2 Page - ON Semiconductor

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MJE5740, MJE5742
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
MJE5740
(IC = 50 mA, IB = 0)
MJE5742
VCEO(sus)
300
400
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
75
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
2
3
2.2
Vdc
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
2.5
3.5
2.4
Vdc
Diode Forward Voltage (Note 3) (IF = 5 Adc)
Vf
2.5
Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25 ms,
Duty Cycle
v 1%)
td
0.04
ms
Rise Time
tr
0.5
ms
Storage Time
ts
8
ms
Fall Time
tf
2
ms
Inductive Load, Clamped (Table 1)
Voltage Storage Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
tsv
4
ms
Crossover Time
tc
2
ms
2. Pulse Test: Pulse Width 300
ms, Duty Cycle = 2%.
3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
ORDERING INFORMATION
Device
Package
Shipping
MJE5740
TO−220
50 Units / Rail
MJE5740G
TO−220
(Pb−Free)
MJE5742
TO−220
MJE5742G
TO−220
(Pb−Free)


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