BUK856-800A datasheet(5/7 Pages) PHILIPS

Teilenummer	BUK856-800A

Bauteilbeschribung	Insulated Gate Bipolar Transistor IGBT

Download	7 Pages

Scroll/Zoom	100%

Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

5 / 7 page

Philips Semiconductors

Product Specification

Insulated Gate Bipolar Transistor (IGBT)

BUK856-800A

Fig.13. Typical Switching Times vs. R

G

conditions: I

C = 12 A; VCL = 500 V; Tj = 125 ˚C

Fig.14. Typical Switching Times vs. I

C

conditions: V

CL = 500 V; RG = 25 Ω; Tj = 125˚C

Fig.15. Test circuit for inductive load switching times.

Fig.16. Typical Energy loss at turn-off vs. R

G

conditions: I

C = 12 A; VCL = 500 V; Tj = 125 ˚C

Fig.17. Typical Energy loss at turn-off vs. I

C

conditions: V

CL = 500 V; RG = 25 Ω; Tj = 125˚C;

parameter V

CL

Fig.18. Inductive Load Switching Times definitions.

1

100

Rg / Ohm

t / ns

BUK8Y6-800A

10000

1000

100

10

1000

td(off)

tf

1

100

E(off) / mJ

BUK8Y6-800A

4

3

2

1

0

Rg / Ohm

10

1000

0

20

40

IC / A

E(off) / mJ

BUK8Y6-800A

4

3

2

1

0

400

300

VCL / V = 500

10

30

0

20

IC / A

t / ns

BUK8Y6-800A

500

400

300

200

100

0

td(off)

tf

10

30

: adjust for correct Ic

VCC = VCL

Lc

D.U.T.

R

0V

t p

0R1

G

VGE

IC measure

tr

td(on)

tc

tf

td(off)

I

V

t

IC

VGE

VCE

10%

90%

10%

March 1993

5

Rev 1.000

Ähnliche Beschreibung - BUK856-800A

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NXP Semiconductors	BUK854-800A	60Kb / 7P	Insulated Gate Bipolar Transistor IGBT October 1994 Rev.1.100
ON Semiconductor	NGTB30N60IHLWG	180Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) November, 2012 ??Rev. 0
	NGTG30N60FLWG	174Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) January, 2013 ??Rev. 1
	NGTB30N60FLWG	182Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0
	NGTB40N60IHLWG	184Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) November, 2012 ??Rev. 0
	NGTB50N60FWG	183Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 1
	NGTG50N60FWG	176Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0
	NGTB30N60FWG	182Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 1
	NGTB50N60FLWG	187Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) January, 2013 ??Rev. 1
	NGTG30N60FWG	175Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0

More results

BUK856-800A Datenblatt(PDF) 5 Page - NXP Semiconductors

BUK856-800A Datenblatt(HTML) 5 Page - NXP Semiconductors

Ähnliche Teilenummer - BUK856-800A

Ähnliche Beschreibung - BUK856-800A

Html Pages

1 2 3 4 5 6 7

Datenblatt Download

Link URL