2SA1012

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

www.unisonic.com.tw

QW-R203-015,E

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-60

V

Collector-Emitter Voltage

-50

V

Collector-Emitter Voltage

-5

V

Peak Collector Current

-5

A

Power Dissipation

25

W

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

℃ unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

-60

V

Collector-Emitter Breakdown Voltage

-50

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cut-off Current

-1.0

µA

Emitter Cut-off Current

-1.0

µA

70

240

DC Current Gain

30

Collector-Emitter Saturation Voltage

-0.2

-0.4

V

Base-Emitter Saturation Voltage

-0.9

-1.2

V

Transition frequency

60

MHz

Collector output capacitance

Cob

170

pF

Turn-on time

0.1

µs

Storage time

1.0

µs

Switching time

Fall time

0.1

µs

RANK

O

Y

RANGE

70 ~ 140

120 ~ 240