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2P02 Datenblatt(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Teilenummer 2P02
Bauteilbeschribung  P-Channel 30-V (D-S) MOSFET
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

2P02 Datenblatt(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
0
25
50
75
100
125
150
TC - Case Temperature (°C)
6
Power, Junction-to-Foot
0
1
2
3
4
25
50
75
100
125
150
TC - Case Temperature (°C)
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2P02
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