Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC5569 Datenblatt(PDF) 2 Page - Unisonic Technologies |
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2SC5569 Datenblatt(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-031,A PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Fall Time tf See specified Test Circuit 25 ns SWITCHING TIME TEST CIRCUIT 50Ω INPUT OUTPUT + + D.C.≦1% VR V BE 100μF IB1 IB2 470μF VCC = 25V RB RL PW=20μs = -5V 20I B1= -20IB2=IC =2.5A 2.0 0 0.8 1.2 1.6 0.4 0 4 5 6 7 2 3 1 10mA 1.0 0.4 0.6 0.8 0.2 0 3 4 5 6 1 2 0 Collector Current, Ic (A) 1.0 2 35 2 hFE - Ic 0.01 0.1 5 7 1000 7 3 20mA 30mA 40mA 90mA 70mA 1.2 1.4 7 8 3 5 27 10 35 27 2 5 7 100 3 10 Collector Current, Ic (A) 1.0 2 3 5 2 0.01 0.1 5 7 100 7 3 35 27 10 35 27 2 5 7 10 3 1.0 2 5 7 1000 3 80mA 60mA IB=0 50mA Collector to Emitter Voltage, VCE (V) Ic - VCE VCE = 2V Base to Emitter Voltage, V BE (V) 25°C -25°C VCE = 2V IC/IB=20 25 °C -25°C VCE(sat) - Ic Ic - VBE Ta= 75°C Ta=75°C |
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