Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2688L-K-T60-E-K Datenblatt(PDF) 3 Page - Unisonic Technologies |
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2SC2688L-K-T60-E-K Datenblatt(HTML) 3 Page - Unisonic Technologies |
3 / 5 page 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R204-023,A BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR VD C=2 300pF T.U.T Open Collector SW. TEST CONDITION 1. E-B reverse bias 2.C=2300pF 3. Apply on shot pulse to T.U.T. (Transistor Under the Test) by SW. JUDGEMENT Reject; BVEBO waveform defect As a result if T.U.T. is not rejected, apply higher voltage to capacitor and test again. |
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Ähnliche Beschreibung - 2SC2688L-K-T60-E-K |
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