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2SC4617L-AE3-R Datenblatt(PDF) 2 Page - Unisonic Technologies |
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2SC4617L-AE3-R Datenblatt(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 www.unisonic.com.tw QW-R206-081,A ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 50 V Emitter -Base Voltage VEBO 7 V DC Collector Current IC 150 mA Power Dissipation PD 150 mW Operating Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Base Breakdown Voltage BVCBO IC= 50μA 60 V Collector Emitter Breakdown Voltage BVCEO IC= 1mA 50 V Emitter-base Breakdown Voltage BVEBO IE=50μA 7 V Collector Cut-Off Current ICBO VCB=60V 0.1 μA Emitter Cut-Off Current IEBO VEB= 7V 0.1 μA DC Current Transfer Ratio hFE VCE=6V,Ic=1mA 120 560 Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.4 V Transition Frequency fT VCE=12V, IE= -2mA, f=100MHz 180 MHz Output Capacitance Cob VCE= 12V, IE= 0A, f=1MHz 2 3.5 pF CLASSIFICATION OF hFE RANK Q R S RANGE 120 ~ 270 180 ~ 390 270 ~ 560 |
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